BFR193E6327 RF Transistor for Low Noise Amplification

BFR193E6327 is an NPN RF transistor designed for low-noise, high-gain amplifier stages and linear broadband amplification. The device supports a collector-emitter voltage up to 12 V and collector current up to 80 mA, with an 8 GHz transition frequency. It is supplied in a compact SOT23 surface-mount package. The manufacturer specifies low-noise, high-gain amplifier use up to 2 GHz, giving engineers a defined range for supported RF amplification work. Use BFR193E6327 when the circuit design calls for this transistor and its documented electrical limits. Observe suitable electrostatic-discharge handling during storage and assembly, and confirm the PCB footprint and operating conditions before installation. Keep substitutions tied to approved circuit requirements. Request a quote for BFR193E6327.