BSP295H6327 Surface Mount Enhancement MOSFET

BSP295H6327 is an N channel enhancement MOSFET for surface mount circuit designs. The device carries a 60 V drain source rating and a 1.8 A continuous drain current rating under the stated conditions. Its SOT-223 package provides a compact format for board-level switching while keeping the power connection accessible through the package tab. Engineers can use the device characteristics to check gate drive, drain current, power dissipation, and switching behavior against circuit requirements. Thermal conditions and PCB layout should also be reviewed before use. When replacing an installed component, match the full device code, package, pin arrangement, and electrical limits rather than relying on a similar MOSFET outline. Request a quote for BSP295H6327.