C2M0080170P 1700 V 40 A Silicon Carbide MOSFET

C2M0080170P is an N-channel silicon carbide power MOSFET for high-voltage switching stages. It is rated at 1700 V and 40 A, with 80 mΩ on-resistance in a TO-247-4 Plus package. The separate driver source pin helps gate drive control in layouts that are built around this package. Engineers can use it in power supplies, inverters, converters, and switching hardware when the design already calls for these ratings and pin functions. Technicians should match the full part number, package, and circuit role before replacement because power stages leave little room for substitution errors. Use proper ESD handling throughout receiving, installation, and final test. Keep gate drive and layout details aligned with the existing design. Request a quote for C2M0080170P.