650 V Silicon Carbide MOSFET C3M0045065D

C3M0045065D is a silicon carbide power MOSFET for high efficiency switching stages and power conversion hardware. It is rated at 650 V and has 45 mΩ on resistance in a TO 247 3 through hole package. The device is suited for hard switching and resonant converter designs, motor drives, power factor correction stages, inverters, and other circuits that benefit from fast switching and low conduction loss. The package supports power board layouts that need a leaded device with thermal handling through an external heat path. Use C3M0045065D for repair, prototype, or production support when the power stage calls for this exact MOSFET. Request a quote for C3M0045065D.