Rugged IRF510 Power MOSFET with Low Gate Charge & 100V Rating

General-purpose switching circuits rely on proven power transistors engineered to deliver consistent electrical efficiency. The IRF510 N-channel power MOSFET provides a 100V drain-to-source breakdown rating along with a 5.6A continuous current capacity. Manufactured by Vishay Siliconix, this single silicon switch comes in a standard through-hole TO-220AB package with a low 0.54Ω on-resistance. Its low gate charge allows fast switching transitions, reducing active energy dissipation in high-frequency driver networks. Hardware engineers count on it for switch-mode power supplies, solenoid drivers, motor speed control boards, and audio amplifier power stages. Rugged through-hole construction ensures clean heat transfer through attached external cooling plates. Exceptional avalanche energy capability guards upstream control electronics against inductive switching spikes. Simple gate voltage thresholds enable direct interfacing with standard driver stages. When your circuit design requires low-loss 100V power control in a proven package, the IRF510 keeps active systems running reliably. Avoid lead-time delays with verified component availability. Lock in your batch of IRF510 components at Florida Circuit today!