IRF640S D2PAK MOSFET: High Current Capability & Low Resistance

Heavy industrial power conversion requires dependable semiconductors engineered for high voltage and thermal efficiency. The IRF640S N-channel power MOSFET provides a 200V drain-to-source rating along with an 18A continuous current capacity. Housed in a surface-mount D2PAK (TO-263) package, this device manufactured by Vishay Siliconix maintains low conduction losses with its 0.18Ω on-resistance. Its low gate charge enables fast switching transitions, minimizing dynamic power losses in high-frequency circuit topologies. Engineers specify this surface-mount transistor for switch-mode power supply units, uninterrupted power systems, motor drives, and DC-DC power converters. Direct board mounting utilizes underlying copper planes to dissipate heat effectively. Fully rated for repetitive avalanche energy, it withstands sudden voltage surges without premature component degradation. Stable threshold parameters ensure reliable logic-stage drive operation across heavy load demand cycles. When your system designs call for rugged high-voltage handling in a surface-mount package, the IRF640S ensures uninterrupted circuit performance. Protect your build timelines with verified component inventory. Find ready-to-ship IRF640S components or contact Florida Circuit to place your order today!