IRF820 Power MOSFET: 500V Endurance & Low Gate Charge

High-voltage switching networks demand rapid response times and tight conduction control to prevent excessive switching losses. The IRF820 N-channel power MOSFET delivers reliable energy management with a 500V drain-to-source rating and a continuous drain current threshold of 2.5A. Housed in a through-hole TO-220 package, the IRF820 features a low 3.0 Ω static on-resistance to minimize heat generation in active power channels. A reduced total gate charge allows gate-drive circuits to switch at higher frequencies while reducing drive power requirements. Built-in avalanche endurance and dV/dt ruggedness protect control logic from voltage transients caused by rapid load shifts or inductive kickback. Design engineers choose this semiconductor for off-line switch-mode power supplies, electronic lamp ballasts, and high-voltage DC-DC converters. Keep your manufacturing pipelines running with fully verified components shipped straight from domestic stock. Submit your volume quote request for the IRF820 at Florida Circuit today.