IRFD110 N-Channel MOSFET: 100V Capacity & 4-Pin HVMDIP Package

Board layouts requiring high-density placement rely on versatile through-hole case styles. The IRFD110 N-channel power MOSFET fulfills this requirement, offering a 100V drain-to-source rating and a 1A continuous drain current threshold. Packaged in a 4-pin HVMDIP (DIP-4) housing, the IRFD110 features a dual-drain configuration that acts as an effective thermal bridge to the circuit board, managing up to 1W dissipation on standard 0.1-inch pin centers. A low maximum static on-resistance of 0.54 Ω limits conduction heat buildup, while low 8.3 nC gate charge specs support rapid switching cycles. Operating in temperatures reaching 175°C with full avalanche endurance, this silicon component resists power transients during inductive load switches. Circuit designers integrate this device into automated insertion lines, motor control drivers, and compact switching power supplies. Ensure supply integrity with factory-tested parts. Secure your inventory and request a quote for the IRFD110 at Florida Circuit today.