IRFP250 N-Channel MOSFET: 200V Capacity & 85 mOhm Resistance

High-power switching circuits require stable thermal management and low conduction resistance to prevent efficiency loss. The IRFP250 N-channel power MOSFET meets these needs by supplying a 200V drain-to-source rating with a continuous drain current threshold of 30A. Built into a heavy-duty TO-247 package, the IRFP250 incorporates an isolated mounting hole to broaden pin creepage distance and reduce electrical arc risks. Its low static on-resistance of 85 mΩ limits operating heat generation across high-current channels. Advanced planar technology delivers rapid nanosecond switching times and 100% tested avalanche endurance, keeping control logic safe from inductive voltage spikes. Engineers rely on this component for switch-mode power supplies, motor control units, and industrial inverter stages. Keep your production line stocked with genuine, factory-tested semiconductors. Secure your parts and request a quote for the IRFP250 at Florida Circuit today.