IRFPE40 N-Channel Power MOSFET: 800V Rating & Fast Switching

High-voltage circuit topologies require total stability and efficient thermal dissipation under heavy line stress. The IRFPE40 N-channel power MOSFET maintains exact control with an 800V drain-to-source rating and a continuous drain current capacity of 5.4A. Housed in a through-hole TO-247AC footprint, the IRFPE40 incorporates an isolated central mounting hole alongside increased pin spacing to safeguard against electrical arcing. Conduction losses stay tightly managed thanks to a maximum static on-resistance of 2.0 Ω, while its 150W power dissipation capability keeps operating temperatures balanced. Built using advanced planar technology, this silicon component provides rapid switching speeds, dynamic dV/dt withstand, and full avalanche robustness. Industrial designers specify this device for switch-mode power supplies, motor controls, and high-voltage DC-DC converters. Keep your manufacturing pipeline stocked with genuine, tested parts. Submit a request for your IRFPE40 quote at Florida Circuit today.