IRFPE50 N-Channel Power MOSFET: 800V Strain & Low Rds(on)

High-voltage industrial conversions demand clean signal processing and zero thermal breakdown. The IRFPE50 N-channel power MOSFET delivers reliable control under intense loads with an 800V drain-to-source voltage limit and a 7.8A continuous drain current capacity. Built in a heavy-duty TO-247AC through-hole package, the IRFPE50 offers increased creepage distance between leads to satisfy strict safety rules. A low 1.2 Ω maximum static on-resistance limits conduction losses, while its 190W power dissipation rating protects power stages during continuous duty. Planar cell construction gives this silicon transistor fast switching speed, dynamic dV/dt stability, and full repetitive avalanche endurance. Power engineers rely on this component for switch-mode supplies, motor drives, and off-line converters. Protect your production timeline with factory-verified parts. Secure your components and request a quote for the IRFPE50 at Florida Circuit today.