IRFR1205 N-Channel MOSFET: Low Resistance & High Current

Heavy power demands require stable thermal handling and robust current capacity. The IRFR1205 N-channel HEXFET power MOSFET provides reliable switching performance with a 55V drain-to-source rating and a 44A continuous drain current limit. Housed in a surface-mount DPAK (TO-252) package, the IRFR1205 limits static on-resistance to a low 27 mΩ at 10V gate drive. That efficient conduction minimizes heat generation under load, while advanced planar processing enables fast switching speed and full avalanche capability. Capable of operating in harsh environments with junction temperatures up to 175°C, it fits seamlessly into automotive modules, DC-DC converter stages, and switching power regulators. Source authentic components with verified supply chains to keep your assembly processes running smoothly. Secure your parts and request a custom quote for the IRFR1205 at Florida Circuit today.