IRFR320 N-Channel MOSFET: High Breakdown Voltage & Low Rds

High-voltage switching circuits require rigorous thermal stability and consistent power delivery. The IRFR320 N-channel power MOSFET provides reliable control with a 400V drain-to-source rating and a 3.1A continuous drain current capability. Packaged in a compact surface-mount DPAK (TO-252) footprint, the IRFR320 keeps static on-resistance to a maximum of 1.8 Ω at 10V gate drive. That controlled resistance limits internal power dissipation, while planar cell technology enables dynamic dV/dt ratings and rapid switching speeds. With repetitive avalanche ratings and an operating junction temperature range up to 150°C, it protects sensitive driver circuitry from stray inductive voltage transients. Designers select this silicon transistor for industrial power supplies, motor control boards, and DC-DC converter stages. Keep your build schedule running on time with genuine semiconductors backed by thorough quality assurance. Secure your inventory and request a quote for the IRFR320 at Florida Circuit today.