IRFR320TR N-Channel MOSFET: High Voltage & Low Resistance

High-voltage switching networks demand robust thermal limits and consistent power regulation. The IRFR320TR N-channel power MOSFET meets those tough requirements head-on, delivering a strong 400V drain-to-source rating with a 3.1A continuous drain current capacity. Shipped in surface-mount DPAK (TO-252) packaging, the IRFR320TR maintains static on-resistance at a minimal 1.8 Ω. That low on-resistance curbs power loss across high-stress rails. Planar cell construction gives this silicon switch rapid switching speeds and complete avalanche breakdown resistance. It operates reliably under intense junction temperatures reaching up to 150°C. Engineers choose this device for power supplies, motor drivers, and high-frequency DC-DC converters. Protect your production timeline with genuine components stored and shipped under strict quality controls. Request your custom quote for the IRFR320TR at Florida Circuit today.