IRFR5305 P-Channel MOSFET: Low Resistance & Fast Switching

Power management designs leave zero room for thermal lag or high switching losses. The IRFR5305 P-channel power MOSFET delivers reliable control with a -55V drain-source breakdown voltage and a -31A continuous drain current rating. Built into a compact surface-mount DPAK (TO-252) package, the IRFR5305 keeps resistance down to just 65 mΩ at -10V gate drive. That minimal RDS(on) reduces heat buildup, while the rugged HEXFET planar technology handles peak junction temperatures up to 175°C. From motor controllers and DC-DC converters to high-side power switching, the IRFR5305 maintains stable, high-efficiency operation under demanding workloads. Fully avalanche-rated with fast switching speeds, it prevents system failure during unexpected voltage spikes. Keep your production lines supplied with genuine components tested for dependable performance. Secure your inventory and request a quote for the IRFR5305 at Florida Circuit today.