IRLML2502TR Power MOSFET: Ultra-Low On-Resistance & High Speed

Power density demands component efficiency at every stage. When board designers need high current handling inside tight layouts, the IRLML2502TR answers the challenge directly. Manufactured in a subminiature SOT-23 enclosure, this N-channel silicon switch supports a 20V breakdown threshold alongside a continuous drain current rating of 4.2A. It features a low 45 mΩ maximum on-resistance driven at gate voltages down to 2.5V. This low gate threshold enables direct control from standard logic microcontrollers while cutting conduction losses across active switching operations. Such combined performance traits make the IRLML2502TR a dependable asset in portable power electronics, battery management systems, and small load-switching circuits. Florida Circuit secures genuine active components to keep your production schedules running smoothly without supply chain delays. Every reel in our warehouse undergoes strict verification for origin and quality. Browse live stock counts, request an instant price estimate, and purchase the IRLML2502TR today.