IRLML2803TRPBF Power MOSFET: Low Profile & Low On-State Resistance
Navigating space restrictions without compromising power handling requires smart component choices. The IRLML2803TRPBF delivers an ideal compromise between board footprint and current control. Built on HEXFET technology, this N-channel silicon switch features a 30V drain-to-source rating with a 1.2A continuous drain current capacity. Encapsulated in a subminiature Micro3 SOT-23 package under 1.1mm high, it drops easily into ultra-thin assemblies. Low gate charge requirements allow smooth direct switching from microcontrollers and low-voltage logic outputs. Meanwhile, a maximum on-resistance of 250 mΩ keeps thermal dissipation under control during ongoing continuous operations. These balanced characteristics position the IRLML2803TRPBF as a go-to solution for signal routing, compact DC-DC converters, LED driver stages, and portable battery management modules. Florida Circuit provides dependable electronic component inventory to keep your production deadlines firmly on track. We inspect all incoming reels to guarantee authentic, reliable parts for every batch. Review current inventory, request a fast quote, and buy the IRLML2803TRPBF today.
- Part Number: IRLML2803TRPBF
- Manufacturer: IR
- Bin Location: 851A
- Description: XIST, 30V 1.2A N-CHN FET SOT23
- Date Code: 0949DC
- *QTY In Stock: 1485
*Subject to prior sale. Please request a quote for the latest information.
