IRLR120N-PBF 100V Fast-Switching, Low-Resistance MOSFET

The IRLR120N-PBF is a 100V N-channel HEXFET® power MOSFET from Infineon, built for fast switching and reliable power control. It uses a surface-mount D-PAK package, making IRLR120N-PBF suitable for compact board designs where efficient switching matters. The device offers a 10A continuous drain current at 25°C and a 48W power dissipation rating under specified conditions. Its maximum drain-to-source on-resistance is 0.185Ω at 10V gate drive, while the rated value is 0.225Ω at 5V. IRLR120N-PBF also features a ±16V gate-to-source voltage rating, a 100V drain-to-source breakdown voltage, and an operating junction temperature range of -55°C to 175°C. Fast switching characteristics support power conversion, motor control, and other switching applications. Its fully avalanche-rated design adds protection during demanding switching conditions. The lead-free construction supports assembly requirements, while the D-PAK format helps simplify PCB placement and thermal management. Need IRLR120N-PBF for your design? Contact Florida Circuit today for availability, pricing, and sourcing support.