K6T4016V3C-TB70: Low-Power 4Mb CMOS Static RAM Chip
Memory retention should never drain your system's power budget. The K6T4016V3C-TB70 CMOS static RAM delivers highly efficient data buffering for portable and embedded electronics. Manufactured by Samsung, this 4-megabit SRAM operates on a low-voltage 3.3V supply to significantly cut down overall energy consumption. Its 256K by 16-bit internal organization processes operations smoothly, featuring a fast 70-nanosecond access time for rapid data retrieval. Hardware designers favor this specific component for battery-operated devices, handheld industrial instruments, and compact communication terminals. The low data retention voltage ensures your saved logic remains perfectly intact even when the device enters standby mode. Housed in a standard 44-pin TSOP package, the chip solders easily onto high-density printed circuit boards. It withstands thermal shifts and guarantees consistent logic performance over time. Secure reliable semiconductor inventory and avoid manufacturing delays. Source the K6T4016V3C-TB70 from Florida Circuit and contact our team today for a custom price quote.
- Part Number: K6T4016V3C-TB70
- Manufacturer: SAMSUNG
- Bin Location: 1621A
- Description: IC KM616V4000- SRAM- 256K X 16
- Date Code: 0217A
- *QTY In Stock: 330
*Subject to prior sale. Please request a quote for the latest information.
