VP0610T-T1 MOSFET | Low RDS(on) & Compact
The VP0610T-T1 MOSFET delivers efficient switching performance with a 60 V drain-source voltage rating and a maximum on-resistance of 0.39 Ω. Its ±20 V gate-source rating allows flexible drive options, while the SOT-223 surface-mount package supports compact PCB layouts. Designed for low to medium power applications, the VP0610T-T1 operates reliably across −55 °C to +150 °C. Ideal for load switching, DC-DC converters, and power management circuits, it offers consistent performance and dependable thermal stability—order the VP0610T-T1 today to bring low-loss, space-efficient switching to your electronic designs.

- Part Number: VP0610T-T1
- Manufacturer: SILICONIX/VISHAY
- Bin Location: 1657A
- Description: TRANS VPO610 SMD
- Date Code: 9812
- *QTY In Stock: 71
*Subject to prior sale. Please request a quote for the latest information.